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| MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM100HC-M * * * * IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 350V hFE DC current gain............................. 100 Non-Insulated Type APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 53.5 43.3 33 8 8 C 5.3 4.5 4.5 B 36.5 14 B E 5.3 10.5 M5 R6 E 23.5 4.5 LABEL 22 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 350 350 400 10 100 100 420 3 1000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 -- 1.47~1.96 15~20 1.47~1.96 15~20 90 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=350V, VEB=2V VCB=400V, Emitter open VEB=10V IC=100A, IB=1A -IC=100A (diode forward voltage) IC=100A, VCE=2V/5V Min. -- -- -- -- -- -- 100/200 -- VCC=200V, IC=100A, IB1=-IB2=2A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.5 1.5 -- 2.0 10 3.0 0.3 0.5 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 Tj=25C 2 Tj=125C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 VCE=5.0V VCE=2.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) IB=1.0A 120 IB=0.5A IB=0.2A IB=0.1A 40 Tj=25C 0 0 1 2 3 4 5 80 COLLECTOR-EMITTER VOLTAGE VCE (V) DC CURRENT GAIN hFE 160 IB=2.0A COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 BASE CURRENT IB (A) VBE(sat) VCE=2.0V Tj=25C SATURATION VOLTAGE VCE(sat) IB=1A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 VCC=200V 5 IB1=-IB2=2A 3 2 10 1 7 5 3 2 ton, ts, tf (s) 4 Tj=25C Tj=125C ts 3 IC=120A 2 IC=50A Tj=25C Tj=125C IC=100A IC=70A SWITCHING TIME 1 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 ton 10 0 7 5 tf 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 2 10 1 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 200 COLLECTOR CURRENT IC (A) ts, tf (s) IB2=-2A 160 -5A Tj=125C ts SWITCHING TIME tf 120 10 0 VCC=200V IC=100A 7 IB1=2A 5 Tj=25C 4 Tj=125C 3 2 10 -1 2 3 4 5 7 10 0 80 40 2 3 4 5 7 10 1 0 0 100 200 300 400 500 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 tw=50s 100s 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 10 D C m s 1m DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA s 10 1 7 5 3 2 TC =25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.5 0.4 200 s 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) 10 3 7 5 3 2 10 2 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Zth (j-c) (C/ W) 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 10 1 7 5 3 2 10 0 0 Tj=25C Tj=125C 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1000 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 0 VCC=200V IB1=-IB2=2A Tj=25C Tj=125C 10 1 800 Irr Qrr 10 0 400 200 trr 2 3 4 5 7 10 1 10 -1 2 3 4 5 7 10 2 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 1.0 0.8 Zth (j-c) (C/ W) 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) 600 Irr (A), Qrr (c) |
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